| CPC H01L 33/36 (2013.01) [H01L 25/0753 (2013.01); H01L 33/20 (2013.01); H01L 33/385 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01)] | 20 Claims |
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1. A semiconductor light-emitting device, comprising:
a first semiconductor contact layer having a first upper surface comprising a first region and a second region;
a semiconductor light-emitting stack located on the first region and not located on the second region, and comprising an active layer;
a first-conductivity-type contact structure located on the second region and electrically connected to the first semiconductor contact layer;
a second semiconductor contact layer located on the semiconductor light-emitting stack;
a second-conductivity-type contact structure located on the semiconductor light-emitting stack and electrically connected to the second semiconductor contact layer; and
a first electrode pad located on and electrically connected to the first-conductivity-type contact structure;
wherein the first-conductivity-type contact structure has a first side surface, a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface, and the first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device,
wherein the first electrode pad has a first width, the first-conductivity-type contact structure has a second width less than the first width, and the first electrode pad covers the first side surface, and
wherein the first-conductivity-type contact structure has a first top-view area, the first electrode pad has a second top-view area greater than the first top-view area.
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