US 12,230,735 B2
Display device including Ga doped indium tin oxide (ITO) based emission layer and manufacturing method thereof
Hyun Eok Shin, Gwacheon-si (KR); Ju Hyun Lee, Seongnam-si (KR); Sung Joo Kwon, Goyang-si (KR); Hyun Ah Sung, Suwon-si (KR); and Dong Min Lee, Anyang-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Apr. 13, 2022, as Appl. No. 17/720,063.
Claims priority of application No. 10-2021-0097737 (KR), filed on Jul. 26, 2021.
Prior Publication US 2023/0024131 A1, Jan. 26, 2023
Int. Cl. H01L 33/16 (2010.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/16 (2013.01) [H01L 33/005 (2013.01); H01L 33/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate;
a plurality of transistors disposed on the substrate;
a first pixel electrode, a second pixel electrode, and a third pixel electrode, each of the pixel electrodes connected to each of the transistors;
a first emission layer disposed to overlap the first pixel electrode, a second emission layer disposed to overlap the second pixel electrode, and a third emission layer disposed to overlap the third pixel electrode; and
a common electrode disposed on the first emission layer, the second emission layer, and the third emission layer,
wherein the first pixel electrode includes a first layer and a second layer disposed on the first layer, and the second layer includes a Ga-doped ITO.