US 12,230,728 B2
Coating apparatus, method and system, solar cell, module, and power generation system
Jian Zhou, Suzhou (CN); Xinmin Cao, Suzhou (CN); Chen Chen, Suzhou (CN); Dengzhi Wang, Suzhou (CN); and Chao Wang, Suzhou (CN)
Assigned to SUZHOU MAIZHENG TECHNOLOGY CO. LTD., Suzhou (CN)
Appl. No. 18/017,558
Filed by SUZHOU MAIZHENG TECHONOLOGY CO. LTD, Suzhou (CN)
PCT Filed Apr. 12, 2021, PCT No. PCT/CN2021/086384
§ 371(c)(1), (2) Date Jan. 23, 2023,
PCT Pub. No. WO2022/027994, PCT Pub. Date Feb. 10, 2022.
Claims priority of application No. 202010764966.8 (CN), filed on Aug. 3, 2020.
Prior Publication US 2023/0307568 A1, Sep. 28, 2023
Int. Cl. H01L 31/0747 (2012.01); C23C 16/24 (2006.01); C23C 16/54 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/0747 (2013.01) [C23C 16/24 (2013.01); C23C 16/54 (2013.01); H01L 31/1804 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A heterojunction solar cell film deposition apparatus configured to deposit an amorphous silicon-based film of a heterojunction solar cell and comprising a loading chamber, a preheating chamber, an unloading chamber, and a process chamber, wherein the process chamber comprises:
at least two intrinsic process chambers configured to deposit an intrinsic layer silicon film;
at least one doping process chamber configured to deposit an N-type silicon film or a P-type silicon film;
wherein the preheating chamber comprises:
a heating preheating chamber configured to heat a carrier plate loaded with a solar cell wafer to be processed; and
a preheating buffer chamber located between the heating preheating chamber and the at least two intrinsic process chambers and configured to adjust gas and pressure atmosphere;
wherein the chambers are isolated by isolation valves, the chambers of the film deposition apparatus are linearly arranged in an order of the loading chamber, the preheating chamber, the at least two intrinsic process chambers, the at least one doping process chamber, and the unloading chamber, so that after the loading chamber is fed, the carrier plate is heated through the heating preheating chamber, then the gas and pressure atmosphere are adjusted in the preheating buffer chamber, then the carrier plate is sent to the intrinsic process chamber, and the film deposition processing of the intrinsic layer silicon film is completed in steps in at least two intrinsic process chambers, and then the carrier plate is sent to the doping process chamber, and the deposition of the N-type silicon film or the P-type silicon film is completed through at least one doping process chamber; and
a pressure difference between the process chambers of the same type is less than 20%.