US 12,230,727 B2
Contacts for solar cells
Matthieu Moors, Palo Alto, CA (US); David D. Smith, Campbell, CA (US); Gabriel Harley, Mountain View, CA (US); and Taeseok Kim, Pleasanton, CA (US)
Assigned to Maxeon Solar Pte. Ltd., Singapore (SG)
Filed by Maxeon Solar Pte. Ltd., Singapore (SG)
Filed on Feb. 24, 2023, as Appl. No. 18/114,119.
Application 18/114,119 is a continuation of application No. 17/133,357, filed on Dec. 23, 2020, granted, now 11,616,159.
Application 17/133,357 is a continuation of application No. 16/408,268, filed on May 9, 2019, granted, now 10,879,413, issued on Dec. 29, 2020.
Application 16/408,268 is a continuation of application No. 15/499,732, filed on Apr. 27, 2017, granted, now 10,290,758, issued on May 14, 2019.
Application 15/499,732 is a continuation of application No. 14/137,970, filed on Dec. 20, 2013, granted, now 9,653,638, issued on May 16, 2017.
Prior Publication US 2023/0238469 A1, Jul. 27, 2023
Int. Cl. H01L 31/061 (2012.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01)
CPC H01L 31/061 (2013.01) [H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/1864 (2013.01); Y02E 10/547 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
an N-type doped region and a P-type doped region on the solar cell, wherein the N-type doped region and the P-type doped region are located at a back surface of the solar cell;
a dielectric layer directly on the N-type doped region and the P-type doped region, the dielectric layer having a first dissociated region and a second dissociated region therein, wherein the first dissociated region is in contact with the N-type doped region, and the second dissociated region is in contact with the P-type doped region, and wherein the first and second dissociated regions comprise dissociated material of the dielectric layer; and
a first metal layer and a second metal layer directly on the dielectric layer, the first metal layer in contact with the dissociated material of the first dissociated region of the dielectric layer, and the second metal layer in contact with the dissociated material of the second dissociated region of the dielectric layer, wherein the dissociated material of the first dissociated region of the dielectric layer is vertically between and physically contacts both the first metal layer and the N-type doped region, and wherein the dissociated material of the second dissociated region of the dielectric layer is vertically between and physically contacts both the second metal layer and the P-type doped region.