US 12,230,718 B2
Display device and manufacturing method of display device
Shunpei Yamazaki, Setagaya (JP); Yasuharu Hosaka, Tochigi (JP); Mitsuo Mashiyama, Oyama (JP); and Kenichi Okazaki, Tochigi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Nov. 23, 2021, as Appl. No. 17/533,588.
Claims priority of application No. 2020-201868 (JP), filed on Dec. 4, 2020.
Prior Publication US 2022/0181492 A1, Jun. 9, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 29/66 (2006.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01)
CPC H01L 29/7869 (2013.01) [H01L 29/66742 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/1201 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A method for manufacturing a display device comprising a first transistor including a first oxide semiconductor layer, and a second transistor including a second oxide semiconductor layer, comprising the steps of:
forming a first insulating layer over a first substrate;
forming a first metal oxide film over the first insulating layer;
forming a first metal film over the first metal oxide film;
forming an island-shaped first resist mask over the first metal film;
removing parts of the first metal film and the first metal oxide film that are not covered with the first resist mask, thereby forming an island-shaped first metal layer and an island-shaped first oxide semiconductor layer and exposing a part of a top surface of the first insulating layer;
removing the first resist mask;
forming a second metal oxide film over the first metal layer and the first insulating layer;
forming a second metal film over the second metal oxide film;
forming an island-shaped second resist mask in a region over the second metal film that does not overlap with the first metal film;
removing parts of the second metal film and the second metal oxide film that are not covered with the second resist mask, thereby forming an island-shaped second metal layer and an island-shaped second oxide semiconductor layer;
removing the second resist mask; and
removing the first metal layer and the second metal layer.