CPC H01L 29/7869 (2013.01) [H01L 29/66742 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/1201 (2023.02)] | 10 Claims |
1. A method for manufacturing a display device comprising a first transistor including a first oxide semiconductor layer, and a second transistor including a second oxide semiconductor layer, comprising the steps of:
forming a first insulating layer over a first substrate;
forming a first metal oxide film over the first insulating layer;
forming a first metal film over the first metal oxide film;
forming an island-shaped first resist mask over the first metal film;
removing parts of the first metal film and the first metal oxide film that are not covered with the first resist mask, thereby forming an island-shaped first metal layer and an island-shaped first oxide semiconductor layer and exposing a part of a top surface of the first insulating layer;
removing the first resist mask;
forming a second metal oxide film over the first metal layer and the first insulating layer;
forming a second metal film over the second metal oxide film;
forming an island-shaped second resist mask in a region over the second metal film that does not overlap with the first metal film;
removing parts of the second metal film and the second metal oxide film that are not covered with the second resist mask, thereby forming an island-shaped second metal layer and an island-shaped second oxide semiconductor layer;
removing the second resist mask; and
removing the first metal layer and the second metal layer.
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