US 12,230,717 B2
Integrated circuit structures having partitioned source or drain contact structures
Mauro J. Kobrinsky, Portland, OR (US); Stephanie Bojarski, Beaverton, OR (US); Babita Dhayal, Aloha, OR (US); Biswajeet Guha, Hillsboro, OR (US); and Tahir Ghani, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Feb. 23, 2023, as Appl. No. 18/113,576.
Application 18/113,576 is a division of application No. 16/122,284, filed on Sep. 5, 2018, granted, now 11,621,354.
Prior Publication US 2023/0207700 A1, Jun. 29, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/78618 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/78651 (2013.01); H01L 29/78696 (2013.01); H01L 2029/7858 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
a fin;
a gate stack over the fin;
a first epitaxial source or drain structure at a first end of the fin;
a second epitaxial source or drain structure at a second end of the fin;
a conductive contact structure coupled to one of the first or the second epitaxial source or drain structures, the conductive contact structure having a first portion partitioned from a second portion by an intervening dielectric layer, wherein the first portion of the conductive contact structure is isolated from the second portion of the conductive contact structure.