US 12,230,714 B2
Self-aligned gate endcap (SAGE) architectures with vertical sidewalls
Ritesh K. Das, Hillsboro, OR (US); Kiran Chikkadi, Hillsboro, OR (US); and Ryan Pearce, Beaverton, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Mar. 29, 2024, as Appl. No. 18/622,615.
Application 18/622,615 is a continuation of application No. 16/868,828, filed on May 7, 2020.
Prior Publication US 2024/0243202 A1, Jul. 18, 2024
Int. Cl. H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01)
CPC H01L 29/7855 (2013.01) [H01L 29/4983 (2013.01); H01L 29/7848 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01)] 28 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a substrate;
a first fin extending from the substrate;
a second fin extending from the substrate, the first fin and the second fin define a trench therebetween, the first fin having first tapered walls, the second fin having second tapered walls, the first fin having a greater degree of tapering along a first portion of the first fin than along a second portion of the first fin, the first portion of the first fin associated with a base of the first fin, the second portion of the first fin associated with a distal end of the first fin, the second fin having a greater degree of tapering along a first portion of the second fin than along a second portion of the second fin, the first portion of the second fin associated with a base of the second fin, the second portion of the second fin associated with a distal end of the first fin;
a trench isolation structure in the trench, the trench isolation structure separating the first portion of the first fin and the first portion of the second fin, the trench isolation structure adjacent the substrate;
a gate structure including a first portion and a second portion extending along a first side and a second side, respectively, of the second portion of the first fin, the gate structure including a third portion extending over the distal end of the first fin, the third portion of the gate structure connecting the first portion of the gate structure and the second portion of the gate structure, the third portion of the gate structure including a gate material extending continuously between a first point on the gate structure and a second point on the gate structure, the first point being a point of the gate material closest to the distal end of the first fin along a first line collinear with a central axis of the first fin, the second point being a point of the gate material farthest from the distal end of the first fin along the first line, the gate structure including a fourth portion and a fifth portion extending along a first side and a second side, respectively, of the second portion of the second fin, the gate structure including a sixth portion extending over the distal end of the second fin, the sixth portion of the gate structure connecting the fourth portion of the gate structure and the fifth portion of the gate structure, the gate material extending continuously between a third point on the gate structure and a fourth point on the gate structure, the third point being a point of the gate material closest to the distal end of the second fin along a second line collinear with a central axis of the second fin, the fourth point being a point of the gate material farthest from the distal end of the second fin along the second line, the gate material including at least one of aluminum or titanium; and
a wall between the first fin and the second fin, the trench isolation structure extending around an end of the wall, the wall including carbon, silicon, and nitrogen, the end of the wall spaced apart from the substrate with the trench isolation structure therebetween, a first side of the wall facing at least a portion of the first fin with the second portion of the gate structure therebetween, a second side of the wall facing at least a portion of the second fin with the fourth portion of the gate structure therebetween.