| CPC H01L 29/7835 (2013.01) [H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/404 (2013.01); H01L 29/7816 (2013.01)] | 10 Claims |
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1. A semiconductor device comprising:
a first electroconductive type body region formed on a main surface of a semiconductor substrate;
a second electroconductive type source region formed on a surface of the body region;
a second electroconductive type drift region formed so as to have contact with the body region;
a second electroconductive type drain region formed on the drift region;
a first electroconductive type buried region having contact with the body region and formed below the drift region;
a gate electrode formed above the body region between the source region and the drift region and above the drift region nearer to the source region via a gate insulating film;
a first field plate that extends from the gate electrode toward the drain region and that is formed above the drift region via a first insulating film, a bottom surface of the first insulating film being lower than a top surface of the second electroconductive type drift region; and
a second field plate that has contact with the source region or the gate electrode and that is formed above the first field plate via a second insulating film,
wherein a distance between the buried region and the drain region is shorter than a distance between the first field plate and the drain region, and longer than a distance between the second field plate and the drain region,
wherein the semiconductor substrate has a first electroconductive type SOI layer formed with a buried insulating layer therebetween, and the first electroconductive type SOI layer separates the buried insulating layer from the first electroconductive type buried region and the second electroconductive type drift region.
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