US 12,230,708 B2
Semiconductor device and a method of manufacturing of a semiconductor device with a resurf oxide
Kilian Ong, Nijmegen (NL); and Benjamin Hung, Nijmegen (NL)
Assigned to Nexperia B.V., Nijmegen (NL)
Filed by NEXPERIA B.V., Nijmegen (NL)
Filed on Nov. 30, 2021, as Appl. No. 17/538,418.
Claims priority of application No. 20210948 (EP), filed on Dec. 1, 2020.
Prior Publication US 2022/0173243 A1, Jun. 2, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/747 (2006.01)
CPC H01L 29/7825 (2013.01) [H01L 29/063 (2013.01); H01L 29/747 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate having a top,
a channel having a top, the channel positioned on the top of the substrate,
a drift, the drift positioned on the top of the channel,
a first poly having a top, and positioned in the channel and the drift, and
a second poly positioned on the top of the first poly, and positioned in the drift, wherein the second poly is at least two times thicker than the first poly and a top surface of the second poly is not recessed in the drift, and
wherein the first poly and the second poly are isolated by a gate oxide and a RESURF oxide, respectively, from the channel and from the drift.