US 12,230,707 B2
Source contact formation of MOSFET with gate shield buffer for pitch reduction
Touhidur Rahman, San Diego, CA (US); and Shanghui Larry Tu, San Diego, CA (US)
Assigned to Silanna Asia Pte Ltd, Singapore (SG)
Filed by Silanna Asia Pte Ltd, Singapore (SG)
Filed on Jun. 21, 2023, as Appl. No. 18/338,572.
Application 18/338,572 is a continuation of application No. 17/015,592, filed on Sep. 9, 2020, granted, now 11,735,656.
Application 17/015,592 is a continuation of application No. 16/103,780, filed on Aug. 14, 2018, granted, now 10,790,389, issued on Sep. 29, 2020.
Prior Publication US 2023/0335639 A1, Oct. 19, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7824 (2013.01) [H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/4175 (2013.01); H01L 29/41775 (2013.01); H01L 29/66696 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising at least one lateral diffusion field effect transistor, comprising:
a source region formed in an active region of the transistor and having a first conductivity type;
a body region formed in the active region and having a second conductivity type;
a source contact comprising an upper portion and a narrower bottom portion that extend vertically through a first interlayer dielectric with the narrower bottom portion electrically connected to the source region and extending vertically into the active region to contact the source region and the body region;
a first drain region formed in the active region and having the first conductivity type;
a second drain region of the first conductivity type spaced laterally from the first drain region in the active region, and electrically connecting a drain contact and the first drain region;
a channel region of the second conductivity type in the body region between the source region and the first drain region;
a gate electrode located above the channel region and separated from the channel region by a gate dielectric; and
a shield plate extending laterally over at least a portion of the first drain region and the gate electrode to the source contact, further extending along a side of the narrower bottom portion of the source contact and between the source contact and the source region, and not extending laterally underneath the gate electrode, wherein the shield plate is separated from the first drain region and the gate electrode by a second interlayer dielectric, the source contact being in physical contact with a top surface of a section of the shield plate;
and wherein:
the source contact comprises a tapered section between the upper portion of the source contact and the narrower bottom portion of the source contact;
the shield plate extends from a position above the first drain region to a position contacting a top portion of the tapered section of the source contact, and extends downward along the tapered section of the source contact and the narrower bottom portion of the source contact;
the tapered section of the source contact is characterized by a lateral width that decreases monotonically from the top portion of the tapered section of the source contact to a bottom portion of the tapered section of the source contact;
the upper portion of the source contact comprises a first substantially uniform lateral width along a substantial portion of a vertical extent of the upper portion of the source contact;
the bottom portion of the source contact comprises a second substantially uniform lateral width along a substantial portion of a vertical extent of the bottom portion of the source contact, wherein the lateral width of the upper portion of the source contact is larger than the lateral width of the bottom portion of the source contact; and
half the first substantially uniform lateral width is larger than half the second substantially uniform lateral width by an amount that is at least as large as a width of a vertical extension of the shield plate from a bottom of the shield plate on a side of the narrower bottom portion of the source contact.