US 12,230,699 B2
Modification of electric fields of compound semiconductor devices
Daniel Piedra, Cambridge, MA (US); James G. Fiorenza, Carlisle, MA (US); and Puneet Srivastava, Wilmington, MA (US)
Assigned to Analog Devices, Inc., Norwood, MA (US)
Filed by Analog Devices, Inc., Norwood, MA (US)
Filed on Oct. 12, 2020, as Appl. No. 17/067,988.
Claims priority of provisional application 62/924,892, filed on Oct. 23, 2019.
Prior Publication US 2021/0126120 A1, Apr. 29, 2021
Int. Cl. H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/1033 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit including a back-side field plate to modify an electric field produced by at least one semiconductor device, the integrated circuit comprising:
a substrate including a plurality of conductive layers disposed in a region of the substrate, the plurality of conductive layers comprising at least a portion of the back-side field plate and including a first conductive layer comprising a p-type material, a second conductive layer comprising the p-type material, and an additional layer including an n-type material disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer is located at a first depth in the substrate and the second conductive layer is located at a second depth in the substrate, the second depth being different from the first depth, and wherein the first conductive layer modifies a first range of electric field strengths and the second conductive layer modifies a second range of electric field strengths that is different from the first range of electric field strengths;
a channel layer disposed on a surface of the substrate, the channel layer being comprised of a first compound material having a Group 13 element and Group 15 element; and
a barrier layer disposed on the channel layer, the barrier layer being comprised of a second compound material having a Group 13 element and a Group 15 element.