US 12,230,697 B2
Semiconductor device and method of manufacturing the same
NackYong Joo, Suwon-si (KR); Dae Hwan Chun, Suwon-si (KR); Jungyeop Hong, Seoul (KR); Youngkyun Jung, Seoul (KR); and Junghee Park, Suwon-si (KR)
Assigned to HYUNDAI MOTOR COMPANY, Seoul (KR); and KIA CORPORATION, Seoul (KR)
Filed by Hyundai Motor Company, Seoul (KR); and Kia Corporation, Seoul (KR)
Filed on May 18, 2022, as Appl. No. 17/663,866.
Claims priority of application No. 10-2021-0099563 (KR), filed on Jul. 29, 2021.
Prior Publication US 2023/0045172 A1, Feb. 9, 2023
Int. Cl. H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7397 (2013.01) [H01L 29/1608 (2013.01); H01L 29/4236 (2013.01); H01L 29/66325 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising
an N+ type substrate;
an N− type layer disposed on a first surface of the N+ type substrate and having a trench opened to a surface opposite to the surface facing the N+ type substrate;
a P type region disposed in the N− type layer and disposed on a side surface of the trench;
a gate electrode disposed in the trench; and
a source electrode and a drain electrode insulated from the gate electrode,
wherein the N− type layer includes a P type shield region covering a bottom surface and an edge of the trench,
wherein the N− type layer includes an N type current diffusion region disposed on a side surface of the trench,
wherein the trench includes
a first trench region disposed in the P type region and having a first width, and
a second trench region disposed in the N− type layer and having a second width, wherein the first width of the first trench region is wider than the second width of the second trench region.