US 12,230,693 B2
Semiconductor device and manufacturing method therefor
Nailong He, Wuxi (CN); and Sen Zhang, Wuxi (CN)
Assigned to CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi (CN)
Appl. No. 17/765,295
Filed by CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi (CN)
PCT Filed Aug. 18, 2020, PCT No. PCT/CN2020/109721
§ 371(c)(1), (2) Date Mar. 30, 2022,
PCT Pub. No. WO2021/135262, PCT Pub. Date Jul. 8, 2021.
Claims priority of application No. 201911395825.7 (CN), filed on Dec. 30, 2019.
Prior Publication US 2022/0367682 A1, Nov. 17, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 21/04 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01)
CPC H01L 29/66681 (2013.01) [H01L 21/0415 (2013.01); H01L 21/76202 (2013.01); H01L 29/66492 (2013.01); H01L 29/7816 (2013.01); H01L 29/0847 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a first drift region formed in the semiconductor substrate, a first trench being formed in the first drift region;
a gate structure formed on the semiconductor substrate, a part of the gate structure covering a part of the first drift region;
a drain region formed at a bottom of the first trench, wherein edges of the drain region are in contact with sidewalls of the first trench;
a source region, the source region and the drain region being respectively disposed on two sides of the gate structure; and
a second drift region located in the semiconductor substrate, the second drift region and the first drift region being respectively disposed on two sides of the gate structure, a part of the gate structure covering a part of the second drift region.