	US 12,230,688 B2
	MOSFET gate engineerinng with dipole films
Yong Yang, Tengzhou (CN); Srinivas Gandikota, Santa Clara, CA (US); Steven C. H. Hung, Sunnyvale, CA (US); Mandyam Sriram, San Jose, CA (US); Jacqueline S. Wrench, San Jose, CA (US); and Yixiong Yang, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 8, 2022, as Appl. No. 17/667,036.
Claims priority of provisional application 63/283,205, filed on Nov. 24, 2021.
Claims priority of provisional application 63/147,217, filed on Feb. 8, 2021.
Prior Publication US 2022/0254900 A1, Aug. 11, 2022
Int. Cl. H01L 29/51 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)

CPC H01L 29/516 (2013.01) [H01L 29/401 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09)]

10 Claims

1. A method of forming a dipole region, the method comprising:

preparing an interfacial layer on a surface of a substrate;

depositing a high-metal oxide layer on the interfacial layer;

preparing a dipole film on the high-K metal oxide layer by exposing the surface of the substrate to a first precursor selected from the group consisting of NbCl₅, NbB₅, NbBr₅, NbI₅, NbF₅, NbOCl₃, and combinations thereof and a second precursor comprising nitrogen, oxygen, of one or more of CH₄or ethanol using atomic layer deposition at a first substrate temperature in a range of 350° C. to 500° C.;

depositing a first high-K metal oxide capping layer on the substrate; and

exposing the substrate to a thermal treatment at a second substrate temperature of at least 700° C. to drive the dipole film into the high-K metal oxide layer and to form the dipole region comprising niobium adjacent to the interfacial layer.