US 12,230,684 B2
Integrated circuit with continuous active region and raised source/drain region
Jinha Park, Yongin-si (KR); and Youngju Choi, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 12, 2022, as Appl. No. 17/862,596.
Claims priority of application No. 10-2021-0098115 (KR), filed on Jul. 26, 2021; and application No. 10-2021-0181032 (KR), filed on Dec. 16, 2021.
Prior Publication US 2023/0027769 A1, Jan. 26, 2023
Int. Cl. H01L 29/417 (2006.01); H01L 21/84 (2006.01); H01L 27/02 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01); H10B 41/40 (2023.01)
CPC H01L 29/41775 (2013.01) [H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/7838 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a first active region extending in a first direction;
a second active region provided along the first direction;
a first active gate electrode, a second active gate electrode, a third active gate electrode and a fourth active gate electrode each extending in a second direction intersecting the first direction on the first active region and the second active regions, wherein the first active gate electrode, the second active gate electrode, the third active gate electrode and the fourth active gate electrode are spaced apart from each other in the first direction;
a first tie gate electrode provided between the first active gate electrode and the second active gate electrode and extending in the second direction;
a second tie gate electrode provided between the third active gate electrode and the fourth active gate electrode and extending in the second direction;
a first source/drain region on the first active region, wherein the first source/drain region is provided between the first tie gate electrode and the second active gate electrode;
a second source/drain region on the first active region, wherein the second source/drain region is provided between the third active gate electrode and the second tie gate electrode;
a first tie gate contact extending in a third direction perpendicular to the first direction and the second direction and connected to the first tie gate electrode;
a second tie gate contact extending in the third direction and connected to the second tie gate electrode;
a first source/drain contact extending in the third direction and connected to the second source/drain region; and
a second source/drain contact extending in the third direction and connected to the first source/drain region,
wherein the first tie gate contact is configured to be shorted to the second source/drain contact, and
wherein the second tie gate contact is configured to be shorted to the first source/drain contact.