US 12,230,680 B2
Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layer
Chih-Piao Chuu, Hsinchu (TW); and Tse-An Chen, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/460,327.
Prior Publication US 2023/0066449 A1, Mar. 2, 2023
Int. Cl. H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/205 (2013.01) [H01L 21/02444 (2013.01); H01L 21/0254 (2013.01); H01L 29/045 (2013.01); H01L 29/1606 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A manufacturing method of a hBNC layer, comprising:
depositing a polycrystalline copper film on a substrate;
converting the polycrystalline copper film into a single-crystalline copper film by performing a thermal annealing process;
providing a first process gas on the single-crystalline copper film to form hexagonal boron nitride (hBN) flakes on the single-crystalline copper film; and
providing a second process gas on the single-crystalline copper film to form a graphene layer filling a space between the hBN flakes and being in physical contact with the single-crystalline copper film.