US 12,230,678 B2
III-N based material structures, methods, devices and circuit modules based on strain management
Umesh K. Mishra, Montecito, CA (US); Stacia Keller, Santa Barbara, CA (US); Elaheh Ahmadi, Hyattsville, MD (US); Chirag Gupta, Goleta, CA (US); and Yusuke Tsukada, Ibaraki (JP)
Assigned to THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)
Appl. No. 17/291,842
Filed by The Regents of the University of California, Oakland, CA (US)
PCT Filed Nov. 7, 2019, PCT No. PCT/US2019/060353
§ 371(c)(1), (2) Date May 6, 2021,
PCT Pub. No. WO2020/149922, PCT Pub. Date Jul. 23, 2020.
Claims priority of provisional application 62/756,999, filed on Nov. 7, 2018.
Prior Publication US 2021/0399096 A1, Dec. 23, 2021
Int. Cl. H01L 29/20 (2006.01); H01L 27/092 (2006.01); H01L 29/205 (2006.01); H01L 29/737 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 33/32 (2010.01)
CPC H01L 29/2003 (2013.01) [H01L 27/0924 (2013.01); H01L 29/205 (2013.01); H01L 29/7378 (2013.01); H01L 29/7786 (2013.01); H01L 29/7848 (2013.01); H01L 33/32 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a ridge or fin structure comprising III-nitride material that is at least partially biaxially relaxed or strained along a first direction of the ridge or the fin structure and at least partially relaxed along a second direction perpendicular to the first direction, wherein the III-nitride material in the ridge or the fin structure comprises a III-nitride layer on a porous III-nitride layer.