US 12,230,669 B2
Standalone high voltage galvanic isolation capacitors
Thomas Dyer Bonifield, Dallas, TX (US); Jeffrey Alan West, Dallas, TX (US); Byron Lovell Williams, Plano, TX (US); and Elizabeth Costner Stewart, Dallas, TX (US)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Sep. 6, 2023, as Appl. No. 18/242,717.
Application 18/242,717 is a division of application No. 17/007,726, filed on Aug. 31, 2020, granted, now 11,784,212.
Prior Publication US 2023/0420489 A1, Dec. 28, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/60 (2013.01) [H01L 23/5223 (2013.01); H01L 27/0292 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A multi-chip module (MCM) comprising:
a first die having a first integrated circuit configured to operate at a first voltage level;
a second die having a second integrated circuit configured to operate at a second voltage level, a difference between the first voltage level and the second voltage level being greater than about 500 V; and
a third die containing a first capacitor coupled in series with a second capacitor through a lower metal plate, the first capacitor including a first upper metal plate having a first area, the first upper metal plate being coupled to the first integrated circuit, the second capacitor including a second upper metal plate having a second area, the second upper metal plate being coupled to the second integrated circuit, a ratio of the first area to the second area being 5.0 or greater.