US 12,230,666 B2
Display device having light emitting stacked structure
Chung Hoon Lee, Ansan-si (KR); and Jong Hyeon Chae, Ansan-si (KR)
Assigned to SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed by SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed on Dec. 5, 2022, as Appl. No. 18/075,247.
Application 18/075,247 is a continuation of application No. 17/164,829, filed on Feb. 1, 2021, granted, now 11,522,008.
Application 17/164,829 is a continuation of application No. 16/236,737, filed on Dec. 31, 2018, granted, now 11,114,499, issued on Sep. 7, 2021.
Claims priority of provisional application 62/613,357, filed on Jan. 3, 2018.
Claims priority of provisional application 62/612,997, filed on Jan. 2, 2018.
Prior Publication US 2023/0101837 A1, Mar. 30, 2023
Int. Cl. H01L 27/15 (2006.01); H01L 25/075 (2006.01); H01L 33/08 (2010.01); H01L 33/30 (2010.01); H01L 33/40 (2010.01); H01L 33/62 (2010.01); G09G 3/32 (2016.01); H01L 33/22 (2010.01)
CPC H01L 27/156 (2013.01) [H01L 25/0753 (2013.01); H01L 27/153 (2013.01); H01L 33/08 (2013.01); H01L 33/30 (2013.01); H01L 33/405 (2013.01); H01L 33/62 (2013.01); G09G 3/32 (2013.01); G09G 2300/0404 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0452 (2013.01); H01L 33/22 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting apparatus, comprising:
a plurality of pixel regions disposed on a support substrate, each of the pixel regions including a plurality of subpixel stacks, each of the subpixel stacks including:
a first epitaxial stack disposed on the support substrate;
a second epitaxial stack disposed on the support substrate; and
a third epitaxial stack disposed on the support substrate,
wherein:
light generated from the first epitaxial stack is configured to be emitted outside and have a different peak wavelength from those emitted from the second and third epitaxial stacks;
light generated from the second epitaxial stack is configured to be emitted outside and have a different peak wavelength from that emitted from the third epitaxial stack;
during operation, one of the subpixel stacks within each pixel region is configured to be selected and driven;
each of the first, second, and third epitaxial stacks comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type conductivity type semiconductor layer; and
at least one subpixel stack further comprises an electrode disposed between the first epitaxial stack and the support substrate to be in ohmic contact with the first epitaxial stack.