| CPC H01L 27/14636 (2013.01) [H01L 27/1462 (2013.01); H01L 27/14634 (2013.01); H01L 27/1469 (2013.01); H04N 25/778 (2023.01); H04N 25/79 (2023.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01)] | 15 Claims |
|
1. An imaging device, comprising:
a first substrate including a sensor pixel that includes a photoelectric conversion element that performs photoelectric conversion to output electric charges to a floating diffusion;
a second substrate including a pixel circuit that outputs a pixel signal on a basis of the electric charges outputted from the sensor pixel; and
a third substrate including a processing circuit that performs signal processing on the pixel signal,
wherein the first substrate, the second substrate, and the third substrate are stacked in this order,
wherein a semiconductor layer including the pixel circuit is divided by an insulating layer,
wherein the insulating layer divides the semiconductor layer to allow a center position of a continuous region of the semiconductor layer or a center position of a region that divides the semiconductor layer to correspond to a position of an optical center of the sensor pixel through the floating diffusion, in at least one direction on a plane of the sensor pixel perpendicular to an optical axis direction,
wherein the insulating layer divides the semiconductor layer to allow the center position of the continuous region of the semiconductor layer or the center position of the region that divides the semiconductor layer to substantially coincide with the position of the optical center of the sensor pixel, in the at least one direction on the plane of the sensor pixel perpendicular to the optical axis direction, and
wherein the center position of the insulating layer and the center position of the region where the photoelectric conversion element is provided are deviated by ⅓ or less of a formation pitch of the photoelectric conversion element.
|