US 12,230,655 B2
Image sensor for the visible and infrared range having an absorbing layer stack
François Deneuville, Grenoble (FR)
Assigned to Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed by Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Filed on Sep. 16, 2021, as Appl. No. 17/477,332.
Claims priority of application No. 2009549 (FR), filed on Sep. 21, 2020.
Prior Publication US 2022/0093656 A1, Mar. 24, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1462 (2013.01) [H01L 27/14621 (2013.01); H01L 27/1464 (2013.01)] 20 Claims
OG exemplary drawing
 
1. Image sensor comprising a plurality of pixels, each comprising:
a semiconductor photodetector region;
a metal region arranged on a first surface of the semiconductor region;
a band-pass or band-stop interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and
between the semiconductor region and the metal region, an absorbing stack comprising, in the order from the semiconductor region, a dielectric layer, a silicon layer, and a tungsten layer;
wherein the tungsten layer is in contact, at an upper surface, with a lower surface of the silicon layer.