US 12,230,651 B2
Photodetector and image sensor including the same
Sungjun Kim, Incheon (KR); Jin-Hong Park, Suwon-si (KR); Sunghun Lee, Suwon-si (KR); and Keun Heo, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 10, 2022, as Appl. No. 17/668,566.
Claims priority of application No. 10-2021-0067460 (KR), filed on May 26, 2021.
Prior Publication US 2022/0384500 A1, Dec. 1, 2022
Int. Cl. H01L 27/14 (2006.01); H01L 27/146 (2006.01)
CPC H01L 27/14607 (2013.01) [H01L 27/14614 (2013.01); H01L 27/14627 (2013.01); H01L 27/14649 (2013.01); H01L 27/14621 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A photodetector, comprising:
at least one gate electrode extending in a first direction;
a ferroelectric layer on the at least one gate electrode, the ferroelectric layer being configured to maintain a state of polarization formed by a gate voltage supplied to the at least one gate electrode;
a light absorbing layer on the ferroelectric layer, the light absorbing layer intersecting the at least one gate electrode, wherein the light absorbing layer is configured such that, in response to an adjustment of the gate voltage, an energy band of the light absorbing layer adjusts;
a source electrode on the ferroelectric layer, the source electrode being connected to a first end of the light absorbing layer; and
a drain electrode on the ferroelectric layer, the drain electrode being connected to a second end of the light absorbing layer.