	US 12,230,637 B2
	Array substrate, manufacturing method thereof, and display panel
Yu Zhang, Guangdong (CN); Miao Jiang, Guangdong (CN); Jiangbo Yao, Guangdong (CN); Lixuan Chen, Guangdong (CN); and Xin Zhang, Guangdong (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
Appl. No. 17/054,542
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong (CN)
PCT Filed Nov. 9, 2020, PCT No. PCT/CN2020/127516 § 371(c)(1), (2) Date Nov. 11, 2020, PCT Pub. No. WO2022/057059, PCT Pub. Date Mar. 24, 2022.
Claims priority of application No. 202010981282.3 (CN), filed on Sep. 17, 2020.
Prior Publication US 2024/0290793 A1, Aug. 29, 2024
Int. Cl. H01L 27/12 (2006.01)

CPC H01L 27/1222 (2013.01) [H01L 27/127 (2013.01); H01L 27/1292 (2013.01)]

7 Claims

1. A method of manufacturing an array substrate, comprising:

providing a base substrate;

forming a first metal layer on the base substrate;

forming a gate insulating layer on the first metal layer;

forming an active layer on the gate insulating layer; and

forming a second metal layer on the active layer,

wherein the active layer comprises a first device layer and a second device layer stacked in sequence, and the second device layer has a two-dimensional nanomaterial and a photosensitivity,

wherein the forming of the active layer on the gate insulating layer comprises:

forming the first device layer on the gate insulating layer, the first device layer having a mobility greater than a preset mobility ranging from 50 to 300 cm²V⁻¹s⁻¹; and

depositing ink on the first device layer by inkjet printing to form the second device layer,

wherein a solute of the ink is Phenylethylammonium Iodide (PEAI): Methyl ammonium iodide (MAI): PbI₂=2:2:3.