| CPC H01L 27/092 (2013.01) [H01L 21/0259 (2013.01); H01L 21/823807 (2013.01); H01L 21/823878 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
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1. A semiconductor structure, comprising:
a first plurality of channel members over a substrate;
a first gate structure wrapping around each of the first plurality of channel members; and
a dielectric fin structure disposed adjacent to the first gate structure, the dielectric fin structure comprising:
a first dielectric layer disposed over the substrate and in direct contact with the first gate structure,
a second dielectric layer disposed over the first dielectric layer, wherein a carbon concentration of the second dielectric layer is greater than a carbon concentration of the first dielectric layer,
a third dielectric layer disposed over the second dielectric layer and spaced apart from the first dielectric layer and the first gate structure by the second dielectric layer, and
a first isolation feature disposed directly over the third dielectric layer.
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