| CPC H01L 27/088 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823462 (2013.01)] | 20 Claims |
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1. A semiconductor device, comprising:
a semiconductor substrate having first and second regions therein;
a first lower semiconductor pattern, which protrudes from the semiconductor substrate in the first region and extends in a first direction across the semiconductor substrate;
a first gate electrode, which extends across the first lower semiconductor pattern and the semiconductor substrate in a second direction orthogonal to the first direction;
a plurality of semiconductor sheet patterns, which are spaced apart from each other in a third direction orthogonal to the first and second directions to thereby define a vertical stack of semiconductor sheet patterns, on the first lower semiconductor pattern;
a first gate insulating film which separates the plurality of semiconductor sheet patterns from the first gate electrode;
a second lower semiconductor pattern, which protrudes from the semiconductor substrate in the second region and extends in the first direction across the semiconductor substrate;
a plurality of wire patterns spaced apart from each other in the third direction, on the second lower semiconductor pattern; and
a second gate insulating film wrapped around each of the plurality of wire patterns;
wherein a thickness of the first gate insulating film less than a thickness of the second gate insulating film; and
wherein an average thickness of the plurality of sheet patterns, as measured in the third direction, is greater than average thickness of the plurality of wire patterns, as measured in the third direction.
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