US 12,230,629 B2
Size-efficient mitigation of latchup and latchup propagation
Terence Hook, Jericho Center, VT (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Mar. 24, 2022, as Appl. No. 17/703,092.
Prior Publication US 2023/0317722 A1, Oct. 5, 2023
Int. Cl. H01L 27/085 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01)
CPC H01L 27/085 (2013.01) [H01L 27/0207 (2013.01); H01L 27/0921 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A set of transistor elements comprising:
a substrate of a first doping type;
a first well of a second doping type formed on the substrate;
a second well of the second doping type formed on the substrate;
a first plane that is parallel to a first side of the first well and a second side of the second well and intersects the first and second wells;
a first complementary transistor cell that is intersected by the first plane;
a second complementary transistor cell that is intersected by the first plane; and
an anti-propagation region of the first doping type that is intersected by the first plane between the first well and the second well.