US 12,230,628 B2
Switching device and method of manufacturing such a device
Aurelie Arnaud, Saint-Cyr-sur-Loire (FR)
Assigned to STMICROELECTRONICS (TOURS) SAS, Tours (FR)
Filed by STMICROELECTRONICS (TOURS) SAS, Tours (FR)
Filed on Nov. 8, 2022, as Appl. No. 18/053,722.
Application 18/053,722 is a division of application No. 16/709,753, filed on Dec. 10, 2019, granted, now 11,532,616.
Claims priority of application No. 1872694 (FR), filed on Dec. 11, 2018.
Prior Publication US 2023/0089468 A1, Mar. 23, 2023
Int. Cl. H01L 27/07 (2006.01); H01L 27/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01)
CPC H01L 27/0783 (2013.01) [H01L 27/0248 (2013.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of manufacturing a switching device, comprising:
forming an arsenic-doped silicon layer; and
forming a phosphorus-doped silicon layer in the arsenic-doped silicon layer.