CPC H01L 27/0207 (2013.01) [H01L 27/0924 (2013.01); G06F 2111/20 (2020.01)] | 20 Claims |
1. An integrated circuit structure, comprising:
a plurality of first cell rows extending in a first direction, wherein the first cell row comprises a first plurality of active regions each of which continuously extends across the first cell row in the first direction, and each of first plurality of active regions comprises a first fin of a fin field effect transistor (FinFET) and wherein a number of first fins changes along the first direction, wherein each of the plurality of first cell rows comprises a respective first plurality of cells disposed therein; and
a plurality of second cell rows extending in the first direction, wherein the second cell row comprises a second plurality of active regions each of which continuously extends across the second cell row in the first direction, and each of second plurality of active regions comprises a second fin of a FinFET and wherein a number of second fins changes along the first direction, wherein each of the plurality of second cell rows comprises a respective second plurality of cells disposed therein, wherein each cell of the plurality of first cell rows is vertically adjacent to at least one cell from the plurality of second cell rows, wherein at least two rows of the plurality of first cell rows have a first row height, a first row width, and a different number of cells, and wherein at least two rows of the plurality of second cell rows have a second row height different from the first row height, a second row width that is same as the first row width, and a different number of cells.
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