US 12,230,623 B2
Method for manufacturing semiconductor device and semiconductor device
Masaki Sekine, Mie (JP); and Takanobu Ono, Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Feb. 28, 2022, as Appl. No. 17/682,952.
Claims priority of application No. 2021-094631 (JP), filed on Jun. 4, 2021.
Prior Publication US 2022/0392883 A1, Dec. 8, 2022
Int. Cl. H01L 25/18 (2023.01); H01L 23/13 (2006.01); H01L 23/14 (2006.01); H01L 23/15 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 25/50 (2013.01) [H01L 23/13 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 23/147 (2013.01); H01L 23/15 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15738 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/15788 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, the method comprising:
forming a plurality of recess portions on a first surface of a support, a first recess portion of the plurality of recess portions being between a plurality of protrusion portions on the first surface;
placing a stacked body into the first of the recess portion, the stacked body including a plurality of semiconductor chips;
filling the first recess portion with a resin layer, the resin layer covering the stacked body in the first recess portion;
irradiating a protrusion portion of the plurality of protrusion portions on the first surface of the support with a laser beam to form a modified portion in the protrusion portion;
dividing the support along the protrusion portion into separate pieces;
after placing the stacked body, forming a columnar electrode extending in a stacking direction of the stacked body on at least one of the semiconductor chips of the stacked body; and
after forming the modified portion, polishing the resin layer until an end of the columnar electrode is exposed.
 
12. A method for manufacturing a semiconductor device, comprising:
forming a pattern of recess portions and protrusion portions in a support for semiconductor devices;
placing a stacked body in at least one of the recess portions, the stacked body comprising a plurality of stacked semiconductor chips;
forming a resin layer filling the recess portions;
irradiating at least one of the protrusion portions on the support with a laser beam to reduce a warpage of the support;
after placing the stacked body, forming a columnar electrode extending in a stacking direction of the stacked body on at least one of the semiconductor chips of the plurality of stacked semiconductor chips; and
after irradiating the at least one of the protrusion portions on the support, polishing the resin layer until an end of the columnar electrode is exposed.