US 12,230,616 B2
Solid state transducers with state detection, and associated systems and methods
Martin F. Schubert, Mountain View, CA (US); and Vladimir Odnoblyudov, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 19, 2021, as Appl. No. 17/152,557.
Application 16/422,413 is a division of application No. 15/342,495, filed on Nov. 3, 2016, granted, now 10,347,614, issued on Jul. 9, 2019.
Application 17/152,557 is a continuation of application No. 16/422,413, filed on May 24, 2019, granted, now 10,937,776.
Application 15/342,495 is a continuation of application No. 13/223,136, filed on Aug. 31, 2011, granted, now 9,490,239, issued on Nov. 8, 2016.
Prior Publication US 2021/0143138 A1, May 13, 2021
Int. Cl. H01L 25/16 (2023.01); H01L 27/02 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); H05B 45/58 (2020.01); H05B 47/105 (2020.01); H01L 33/00 (2010.01)
CPC H01L 25/167 (2013.01) [H01L 27/0255 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01); H05B 45/58 (2020.01); H05B 47/105 (2020.01); H01L 27/0248 (2013.01); H01L 33/00 (2013.01); H01L 2924/0002 (2013.01); Y02B 20/30 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A solid state transducer system, comprising:
a support substrate;
a solid state emitter carried by the support substrate, the solid state emitter including a first side facing away from the support substrate and a second side facing toward the support substrate, wherein the first side has a first region and a second region laterally spaced apart from the first region;
a state device including an electrostatic discharge diode coupled in parallel with the solid state emitter and disposed over the first region, the state device including a portion of an epitaxial growth substrate aligned with the first region, wherein the solid state emitter has been epitaxially formed on the epitaxial growth substrate; and
a contact of the solid state emitter at the second region,
wherein the solid state emitter includes a first semiconductor component having the first side, a second semiconductor component having the second side, and an active region between the first and second semiconductor components, the active region configured to emit radiation,
wherein the contact is a first contact of the solid state emitter connected to the first semiconductor component, and
wherein a first contact of the electrostatic discharge diode is coupled to a second contact of the solid state emitter, which is connected to the second semiconductor component, the first contact of the electrostatic discharge diode including a via filled with an electrically conductive material, the via extending through the electrostatic discharge diode and at least the active region of the solid state emitter.