US 12,230,614 B2
Multi-typed integrated passive device (IPD) components and devices and processes implementing the same
Marvin Marbell, Cary, NC (US); Haedong Jang, San Jose, CA (US); Jeremy Fisher, Raleigh, NC (US); and Basim Noori, Durham, NC (US)
Assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)
Filed by WOLFSPEED, INC., Durham, NC (US)
Filed on Dec. 17, 2021, as Appl. No. 17/555,015.
Prior Publication US 2023/0197698 A1, Jun. 22, 2023
Int. Cl. H01L 25/16 (2023.01); H01L 23/00 (2006.01)
CPC H01L 25/16 (2013.01) [H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48195 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13063 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19105 (2013.01)] 32 Claims
OG exemplary drawing
 
1. A transistor device, comprising,
a metal submount;
a transistor die arranged on said metal submount;
a first integrated passive device (IPD) component comprising a first substrate arranged on said metal submount; and
a second integrated passive device (IPD) component comprising a second substrate arranged on the metal submount,
wherein the first substrate is a different material from the second substrate;
wherein the first integrated passive device (IPD) component comprises a printed circuit board (PCB) substrate; and
wherein the second integrated passive device (IPD) component comprises a silicon carbide (SiC) substrate.