	US 12,230,609 B2
	Semiconductor packages
Chin-Fu Kao, Taipei (TW); Chih-Yuan Chien, Hsinchu County (TW); Li-Hui Cheng, New Taipei (TW); and Szu-Wei Lu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 31, 2022, as Appl. No. 17/709,441.
Application 17/709,441 is a continuation of application No. 16/547,609, filed on Aug. 22, 2019, granted, now 11,296,051.
Prior Publication US 2022/0223567 A1, Jul. 14, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 25/065 (2023.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01)

CPC H01L 25/0657 (2013.01) [H01L 21/4853 (2013.01); H01L 21/568 (2013.01); H01L 23/3121 (2013.01); H01L 23/367 (2013.01); H01L 23/5389 (2013.01); H01L 24/32 (2013.01); H01L 21/561 (2013.01); H01L 2224/32055 (2013.01); H01L 2225/0652 (2013.01)]

20 Claims

1. A semiconductor package, comprising:

a first semiconductor die;

an adhesive layer, directly adhered to peripheral regions of a top surface of the first semiconductor die;

a heat dissipation layer different from the adhesive layer, adhered to a central region of the top surface of the first semiconductor die and surrounded by the adhesive layer, wherein the heat dissipation layer is extended onto the entire central region between the peripheral regions of the top surface of the first semiconductor die;

a semiconductor device over the first semiconductor die; and

an underfill between the semiconductor device and the first semiconductor die, wherein the adhesive layer and the heat dissipation layer are in direct contact with the underfill.