US 12,230,608 B2
Semiconductor assemblies with system and methods for conveying signals using through mold vias
Travis M. Jensen, Boise, ID (US); and Raj K. Bansal, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 17, 2021, as Appl. No. 17/478,284.
Claims priority of provisional application 63/234,922, filed on Aug. 19, 2021.
Prior Publication US 2023/0055425 A1, Feb. 23, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 21/565 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/50 (2013.01); H01L 2224/2101 (2013.01); H01L 2225/06548 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
first and second dies forming a die stack;
a molding material encapsulating the die stack and forming an upper molded surface of the die stack;
first conductive traces that are operably coupled to an active surface of the first die, the first conductive traces extending from between the first die and the second die to corresponding first via locations in the molding material beyond a first side edge of the die stack;
second conductive traces that are operably coupled to an active surface of the second die opposite the first die, the second conductive traces extending to corresponding second via locations in the molding material beyond the first side edge of the die stack, wherein each of the first via locations is in vertical alignment with one of the second via locations; and
first through mold vias (TMVs) extending through the molding material between vertically aligned ones of the first and second via locations, each of the first TMVs comprising conductive material having a first end surface in contact with a corresponding one of the first conductive traces and a second end surface in contact with a corresponding one of the second conductive traces at a location approximately planar with the active surface of the second die,
wherein the molding material extending between upper surfaces of the first conductive traces and the upper molded surface of the die stack is free from any TMV.