| CPC H01L 25/0655 (2013.01) [H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/5381 (2013.01); H01L 24/09 (2013.01); H01L 24/16 (2013.01); H01L 25/50 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/16145 (2013.01)] | 20 Claims |
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1. A structure, comprising:
a semiconductor die having an active surface and a rear surface opposite to the active surface, and conductive pads formed on the active surface;
alignment structures disposed on the rear surface of the semiconductor die, wherein the alignment structures comprise a joint alloy layer disposed in between two conductive seed layers, and wherein the joint alloy layer and the two conductive seed layers are directly overlapped with the conductive pads formed on the active surface of the semiconductor die in a thickness direction of the semiconductor die;
a first conductive structure and a second conductive structure disposed on the active surface of the semiconductor die and electrically connected to the semiconductor die, wherein the first conductive structure and the second conductive structure have different heights; and
a redistribution layer disposed over the first conductive structure and the second conductive structure, and electrically connected to the first conductive structure.
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