form a first bonding layer on a first wafer substrate, the first bonding layer having a recess;

forming a circuitry structure and a second bonding layer on a second wafer substrate, the circuitry structure being located between the second wafer substrate and the second bonding layer;

bonding the second wafer substrate to the first wafer substrate by contacting the second bonding layer with the first bonding layer;

removing the second wafer substrate;

forming a conductor terminal on the circuitry structure, wherein the conductor terminal is positioned in a component region keeping from the recess of the first bonding layer; and

performing a singulation process to obtain a semiconductor chip comprising the circuitry structure and the conductor terminal, wherein the recess is separated from the semiconductor chip by the singulation process.