| CPC H01L 24/05 (2013.01) [H01L 23/53204 (2013.01); H01L 24/03 (2013.01); H01L 2224/04042 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/10253 (2013.01)] | 51 Claims |

|
1. A method of making a semiconductor apparatus, comprising:
forming a first insulating structure extending from a first bond pad of a semiconductor die to a first conductive lead;
forming a first conductive trace on the first insulating structure from the first bond pad to the first conductive lead;
forming a second insulating structure on the first conductive trace extending from the first bond pad to the first conductive lead; and
forming a third insulating structure, the third insulating structure extending from a second of the bond pads to a second of the conductive leads.
|