CPC H01L 23/544 (2013.01) [G03F 1/42 (2013.01); G03F 1/70 (2013.01); H01L 21/0274 (2013.01); H01L 21/6835 (2013.01); H01L 22/20 (2013.01); H01L 2221/68309 (2013.01); H01L 2223/54426 (2013.01)] | 20 Claims |
1. A method for forming an integrated chip, comprising:
performing an alignment process on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins;
bonding the first semiconductor workpiece to the second semiconductor workpiece;
determining a shift value between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece; and
forming a layer of an integrated circuit (IC) structure over the second semiconductor workpiece based at least in part on the shift value.
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