US 12,230,580 B2
Method of manufacturing semiconductor package, and semiconductor package
Junghoon Kang, Anyang-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 15, 2022, as Appl. No. 17/695,478.
Claims priority of application No. 10-2021-0086935 (KR), filed on Jul. 2, 2021.
Prior Publication US 2023/0005843 A1, Jan. 5, 2023
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 21/4857 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5385 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29316 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/29344 (2013.01); H01L 2224/29355 (2013.01); H01L 2224/32227 (2013.01); H01L 2224/83203 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a substrate structure including a vertical connection conductor and a semiconductor chip;
forming a first redistribution structure including a first redistribution conductor;
forming a second redistribution structure including a second redistribution conductor; and
compressing the first redistribution structure and the second redistribution structure on a front surface and a rear surface of the substrate structure, respectively, using anisotropic conductive films including conductive particles,
wherein the forming the substrate structure, the forming the first redistribution structure, and the forming the second redistribution structure are performed independently and separately,
wherein the first redistribution conductor is electrically connected to the vertical connection conductor and the semiconductor chip by the conductive particles, and
wherein the second redistribution conductor is electrically connected to the vertical connection conductor by the conductive particles.