| CPC H01L 23/5226 (2013.01) [H01L 21/31144 (2013.01); H01L 21/76826 (2013.01); H01L 21/76832 (2013.01); H01L 21/76877 (2013.01)] | 20 Claims |
|
1. A method, comprising:
forming a first conductive feature and a second conductive feature in a dielectric layer;
selectively forming a first etch stop layer over the dielectric layer while leaving the first conductive feature and the second conductive feature exposed;
forming a capping layer over the first conductive feature;
performing a plasma treatment on the capping layer to form a bonding layer between the capping layer and the first conductive feature;
forming a second etch stop layer over the first etch stop layer;
etching the second etch stop layer to form an opening; and
filling a conductive material in the opening to form a conductive via.
|