US 12,230,566 B2
Metal-insulator-metal structure
Yuan-Yang Hsiao, Hsinchu (TW); Hsiang-Ku Shen, Hsinchu (TW); and Dian-Hau Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 16, 2023, as Appl. No. 18/511,438.
Application 17/466,013 is a division of application No. 16/802,246, filed on Feb. 26, 2020, granted, now 11,114,373, issued on Sep. 7, 2021.
Application 18/511,438 is a continuation of application No. 17/466,013, filed on Sep. 3, 2021, granted, now 11,842,959.
Prior Publication US 2024/0088016 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 29/94 (2006.01)
CPC H01L 23/5223 (2013.01) [H01L 21/0214 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 28/60 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/02178 (2013.01); H01L 21/02189 (2013.01); H01L 21/0271 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 28/40 (2013.01); H01L 28/87 (2013.01); H01L 29/94 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bottom conductor plate layer comprising a first opening;
a first dielectric layer over the bottom conductor plate layer;
a middle conductor plate layer disposed over the first dielectric layer and comprising a second opening and a first dummy plate disposed within second opening;
a second dielectric layer over the middle conductor plate layer;
a top conductor plate layer disposed over the second dielectric layer and comprising a third opening and a second dummy plate disposed within the third opening; and
a first contact via extending through the first opening, the first dummy plate and the second dummy plate.