CPC H01L 23/49833 (2013.01) [H01L 23/481 (2013.01); H01L 23/642 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/107 (2013.01)] | 19 Claims |
1. A semiconductor package structure, comprising:
a frontside redistribution layer;
a first semiconductor die disposed over the frontside redistribution layer;
a first capacitor disposed over the frontside redistribution layer and electrically coupled to the first semiconductor die;
a conductive terminal disposed below the frontside redistribution layer and electrically coupled to the frontside redistribution layer; and
a backside redistribution layer disposed over the first semiconductor die,
wherein the first capacitor is a multi-terminal multi-capacitor structure and is electrically coupled to a second semiconductor die adjacent to the first semiconductor die.
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