US 12,230,550 B2
Structures and methods for heat dissipation of semiconductor devices
S. L. Chen, Hsin-Chu (TW); Chen-Hsuan Yen, Taichung (TW); and Han-Tang Lo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Apr. 28, 2023, as Appl. No. 18/141,287.
Application 18/141,287 is a continuation of application No. 17/156,164, filed on Jan. 22, 2021, granted, now 11,658,088.
Application 17/156,164 is a continuation of application No. 15/788,696, filed on Oct. 19, 2017, granted, now 10,910,290.
Prior Publication US 2023/0268242 A1, Aug. 24, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/367 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/367 (2013.01) [H01L 21/76877 (2013.01); H01L 23/3677 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor device embedded in a device region;
a thermal conductor embedded in the device region;
a vertical interconnect access (via) disposed in the device region and thermally coupling the thermal conductor to at least one surface of the semiconductor structure,
wherein the semiconductor device and the via share the following layers:
a first layer formed of a first material,
a second layer formed of a second material and formed on the first layer, and
a third layer formed of a third material and formed on the second layer, wherein the first material, the second material and the third material are different from each other.