US 12,230,543 B2
Die cleaning systems and related methods
Michael J. Seddon, Gilbert, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed on Nov. 9, 2023, as Appl. No. 18/505,215.
Application 18/505,215 is a division of application No. 16/929,542, filed on Jul. 15, 2020, granted, now 11,854,889.
Application 16/929,542 is a division of application No. 15/988,874, filed on May 24, 2018, abandoned.
Prior Publication US 2024/0079274 A1, Mar. 7, 2024
Int. Cl. H01L 21/78 (2006.01); B23K 26/00 (2014.01); B23K 26/53 (2014.01); B23K 101/40 (2006.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 21/683 (2006.01); H01L 23/544 (2006.01)
CPC H01L 21/78 (2013.01) [H01L 21/02076 (2013.01); H01L 21/268 (2013.01); H01L 21/3043 (2013.01); H01L 21/6836 (2013.01); H01L 23/544 (2013.01); B23K 26/0006 (2013.01); B23K 26/53 (2015.10); B23K 2101/40 (2018.08); H01L 2223/5446 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a plurality of semiconductor die, the method comprising:
forming a damage layer beneath a surface of a die street in a semiconductor substrate using a laser;
ablating only a portion of material of the die street using the laser;
singulating the semiconductor substrate into a plurality of semiconductor die through sawing along the die street;
immersing the plurality of semiconductor die in a liquid; and
removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die while immersed;
wherein the sonic energy is applied directly to a spindle coupled with a chuck and transmitted to the chuck through the spindle, wherein the semiconductor substrate is upon the chuck.