| CPC H01L 21/76837 (2013.01) [H01L 21/76877 (2013.01); H01L 21/76885 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/5386 (2013.01); H01L 24/11 (2013.01); H01L 24/14 (2013.01); H01L 2924/35 (2013.01)] | 4 Claims |

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1. A method, comprising:
forming a conductive structure at least partially above a conductive feature of a wafer;
attaching a solder ball structure to a side of the conductive structure; and
after attaching the solder ball structure to the side of the conductive structure, forming a repassivation layer on a side of the wafer proximate the side of the conductive structure, wherein forming the repassivation layer on the side of the wafer includes:
performing a printing process that forms the repassivation layer on the side of the wafer proximate the side of the conductive structure; and
curing the repassivation layer including heating the wafer while performing the printing process to at least partially cure the repassivation layer.
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