US 12,230,538 B2
Semiconductor device and method of manufacturing the same
Shinya Okuda, Yokkaichi (JP); Kei Watanabe, Yokkaichi (JP); and Kosuke Horibe, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Nov. 18, 2020, as Appl. No. 16/951,584.
Claims priority of application No. 2019-208791 (JP), filed on Nov. 19, 2019.
Prior Publication US 2021/0151372 A1, May 20, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 21/76834 (2013.01) [H01L 21/76801 (2013.01); H01L 21/76895 (2013.01); H01L 23/5222 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 24/08 (2013.01); H01L 2224/08145 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first etching stopper film;
a first insulator provided on the first etching stopper film and including an SiO2 film, where Si represents silicon and O represents oxygen;
a first interconnect provided in the first etching stopper film and the first insulator and including a metal element;
a second insulator provided on the first insulator and the first interconnect and including Si, C (carbon) and N (nitrogen), content of Si—H groups (H represents hydrogen) in the second insulator being 6.0% or less, content of Si—CH3 groups in the second insulator being 0.5% or less, the second insulator being in contact with an upper surface of the first interconnect;
a third insulator provided on the second insulator and including Si and O, the third insulator being in contact with the second insulator;
a second etching stopper film provided on the third insulator;
a fourth insulator provided on the second etching stopper film and including Si and O;
a first via plug provided on the first interconnect and provided in the second insulator and the third insulator; and
a second interconnect provided on the first via plug and provided in the second etching stopper film and the fourth insulator, and including the metal element.