US 12,230,533 B2
Method for manufacturing a semiconductor-on-insulator substrate
Marcel Broekaart, Theys (FR); and Arnaud Castex, Grenoble (FR)
Assigned to Soitec, Bernin (FR)
Appl. No. 17/435,017
Filed by Soitec, Bernin (FR)
PCT Filed Mar. 26, 2020, PCT No. PCT/EP2020/058529
§ 371(c)(1), (2) Date Aug. 30, 2021,
PCT Pub. No. WO2020/201003, PCT Pub. Date Oct. 8, 2020.
Claims priority of application No. 1903387 (FR), filed on Mar. 29, 2019.
Prior Publication US 2022/0139768 A1, May 5, 2022
Int. Cl. H01L 21/762 (2006.01)
CPC H01L 21/76254 (2013.01) 10 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor-on-insulator structure, comprising the following steps:
providing a donor substrate comprising a weakened zone delimiting a layer to be transferred;
providing a receiver substrate;
bonding the donor substrate to the receiver substrate, the layer to be transferred being located on a bonding interface of the donor substrate, by initiating a bonding wave at a first region on a periphery of the bonding interface and propagating the bonding wave toward a second region on the periphery of the bonding interface opposite the first region, the propagating in a central portion of the bonding interface at a first speed Vc and propagating in a peripheral portion of the bonding interface at a second speed Vp, wherein the bonding is implemented in controlled conditions to increase a difference between the first speed Vc and the second speed Vp such that Vp>1.585*Vc;
forming a gaseous inclusion in the second region on the periphery of the bonding interface; and
detaching the donor substrate along the weakened zone to transfer the layer to be transferred to the receiver substrate.