US 12,230,532 B2
Semiconductor device, method of manufacture by monitoring relative humidity, and system of manufacture thereof
Yun Chen Teng, New Taipei (TW); Chen-Fong Tsai, Hsinchu (TW); Han-De Chen, Hsinchu (TW); Jyh-Cherng Sheu, Hsinchu (TW); Huicheng Chang, Tainan (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 27, 2021, as Appl. No. 17/459,509.
Prior Publication US 2023/0063975 A1, Mar. 2, 2023
Int. Cl. H01L 21/762 (2006.01); H01L 21/67 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/76251 (2013.01) [H01L 21/67253 (2013.01); H01L 29/0665 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78645 (2013.01); H01L 27/1203 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
loading a first wafer and a second wafer into a wafer bonding system;
measuring a relative humidity within the wafer bonding system a first time;
adjusting the relative humidity within the wafer bonding system after the measuring the relative humidity, wherein the adjusting the relative humidity is performed when the relative humidity is outside of a range of 35% to 60%; and
bonding the first wafer to the second wafer.