| CPC H01L 21/68735 (2013.01) [C23C 16/402 (2013.01); C23C 16/4583 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/67017 (2013.01)] | 19 Claims |
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1. A substrate processing method comprising:
providing a substrate within a substrate supporting apparatus;
supplying an inert gas within the substrate supporting apparatus; and
depositing a film onto the substrate by sequentially and repeatedly supplying a source gas, supplying a reaction gas, and activating the reaction gas within the substrate supporting apparatus,
wherein the substrate supporting apparatus comprises:
a susceptor main body comprising an inner portion, a periphery portion, and a concave portion between the inner portion and the periphery portion; and
a rim arranged in the concave portion,
wherein, when the substrate is mounted on the rim,
the rim contacts the substrate within an edge exclusion zone of the substrate,
an upper surface of the inner portion is lower than an upper surface of the rim to make a rear surface of the substrate spaced apart from the inner portion,
a first space is formed between the rear surface of the substrate and the inner portion,
a second space is formed above the substrate, and
one or more channels are formed in at least one of the susceptor main body and the rim, the one or more channels connecting the first space to the second space separately or together with one another,
wherein the inert gas is supplied from the second space to the first space through the one or more channels before depositing the film, and
wherein the inert gas prevents pressure imbalance between the first space and the second space during the deposition of the film.
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