US 12,230,514 B2
Substrate processing apparatus including filling gas supply line and substrate processing method using the same
Byunghwan Kong, Uiwang-si (KR); Heeyeon Kim, Seoul (KR); Homin Son, Seoul (KR); and Geunkyu Choi, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 13, 2021, as Appl. No. 17/499,988.
Claims priority of application No. 10-2021-0030029 (KR), filed on Mar. 8, 2021.
Prior Publication US 2022/0285174 A1, Sep. 8, 2022
Int. Cl. H01L 21/67 (2006.01)
CPC H01L 21/67011 (2013.01) 20 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
disposing a wafer in a wafer region of a tube that is inside an outer tube;
injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region, wherein the inert gas is injected into the gap region from a first filling hole of a filling gas supply line, and wherein the first filling hole faces in a direction between the inner sidewall of the tube and a circumference of the wafer region; and
injecting a process gas into the wafer region of the tube,
wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.