US 12,230,509 B2
Method for fabricating semiconductor device
Ming Thai Chai, Singapore (SG); Meng Xie, Singapore (SG); and Wenbo Ding, Singapore (SG)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Sep. 22, 2020, as Appl. No. 17/029,021.
Claims priority of application No. 202010876084.0 (CN), filed on Aug. 27, 2020.
Prior Publication US 2022/0068651 A1, Mar. 3, 2022
Int. Cl. H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/762 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/324 (2013.01) [H01L 21/02057 (2013.01); H01L 21/02068 (2013.01); H01L 21/28518 (2013.01); H01L 21/7624 (2013.01); H01L 29/401 (2013.01); H01L 29/665 (2013.01); H01L 29/66568 (2013.01); H01L 29/78 (2013.01); H01L 29/66545 (2013.01); H01L 29/66606 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device:
forming a gate structure on a substrate, wherein the substrate comprises a trap rich layer having oxygen clusters;
forming a source/drain region adjacent to the gate structure;
performing a first cleaning process;
performing a first rapid thermal anneal (RTA) process to remove oxygen clusters in the trap rich layer of the substrate after forming the source/drain region, wherein the first RTA process is between 560° C. to 700° C.;
forming a metal layer on the source/drain region; and
transforming the metal layer into a silicide layer.